ds30160 rev. 6 - 2 1 of 3 MMDT4126 www.diodes.com diodes incorporated epitaxial planar die construction complementary npn type available (mmdt4124) ideal for medium power amplification and switching ultra-small surface mount package also available in lead free version features maximum ratings @ t a = 25 c unless otherwise specified a m j l d b c h k g f c 1 b 2 e 2 e 1 b 1 c 2 mechanical data MMDT4126 dual pnp small signal surface mount transistor characteristic symbol MMDT4126 unit collector-base voltage v cbo -25 v collector-emitter voltage v ceo -25 v emitter-base voltage v ebo -4.0 v collector current - continuous (note 1) i c -200 ma power dissipation (note 1, 2) p d 200 mw thermal resistance, junction to ambient (note 1) r ja 625 k/w operating and storage and temperature range t j ,t stg -55 to +150 c notes: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad layout document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. maximum combined dissipation. sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal f 0.30 0.40 h 1.80 2.20 j 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 0 8 all dimensions in mm case: sot-363, molded plastic case material - ul flammability rating 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: solderable per mil-std-202, method 208 also available in lead free plating (matte tin finish). please see ordering information, note 5, on page 2 terminal connections: see diagram marking (see page 2): k2b ordering & date code information: see page 2 weight: 0.006 grams (approx.)
ds30160 rev. 6 - 2 2 of 3 MMDT4126 www.diodes.com electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 3) collector-base breakdown voltage v (br)cbo -25 v i c = -10 a, i e = 0 collector-emitter breakdown voltage v (br)ceo -25 v i c = -1.0ma, i b = 0 emitter-base breakdown voltage v (br)ebo -4.0 v i e = -10 a, i c = 0 collector cutoff current i cbo -50 na v cb = -20v, i e = 0v emitter cutoff current i ebo -50 na v eb = -3.0v, i c = 0v on characteristics (note 3) dc current gain h fe 120 60 360 i c = -2.0ma, v ce = -1.0v i c = -50ma, v ce = -1.0v collector-emitter saturation voltage v ce(sat) -0.40 v i c = -50ma, i b = -5.0ma base-emitter saturation voltage v be(sat) -0.95 v i c = -50ma, i b = -5.0ma small signal characteristics output capacitance c obo 4.5 pf v cb = -5.0v, f = 1.0mhz, i e = 0 input capacitance c ibo 10 pf v eb = -0.5v, f = 1.0mhz, i c = 0 small signal current gain h fe 120 480 v ce = -1.0v, i c = -2.0ma, f = 1.0khz current gain-bandwidth product f t 250 mhz v ce = -20v, i c = -10ma, f = 100mhz noise figure nf 4.0 db v ce = -5.0v, i c = -100 a, r s = 1.0k f = 1.0khz ordering information (note 4) device packaging shipping MMDT4126-7 sot-363 3000/tape & reel notes: 3. short duration test pulse used to minimize self-heating effect. 4. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 5. for lead free version (with lead free terminal finish) part number, please add "-f" suffix to part number abov e. example: MMDT4126-7-f. marking information k2b k2b ym ym k2b = product type marking code ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september date code key month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 code jklmnpr st u vw
ds30160 rev. 6 - 2 3 of 3 MMDT4126 www.diodes.com 0.5 0.6 0.7 0.8 0.9 1 . 0 110100 v , base-emitter (v) be(sat) saturation voltage i , collector current (ma) c fig. 5, typical base-emitter saturation volta g e vs. collector current i c i b =10 0.01 0.1 10 1 1 10 100 1000 v , collector-emitter (v) ce(sat) saturation voltage i , collector current (ma) c fig. 4, typical collector-emitter saturation voltage vs. collector current i c i b = 10 1 10 1000 100 0.1 1 10 1000 100 h , dc current gain fe i , collector current (ma) c fig. 3, typical dc current gain vs collector current t = -25c a t = +25c a t = 125c a v = 1.0v ce 1 100 10 0.1 1 10 100 c , input capacitance (pf) ibo c , output capacitance (pf) obo v , collector-base voltage (v) cb fig. 2, input and output capacitance vs. collector-base volta g e f= 1mhz cibo cobo 0 50 100 25 50 75 100 125 150 175 200 p , power dissipation (mw) d t , ambient temperature (c) a fig. 1, max power dissipation vs ambient tem p erature 150 200 250 300 350 0
|
